Integrated circuit structures having conductive structures in fin isolation regions

ABSTRACT

Integrated circuit structures having conductive structures in fin isolation regions are described. In an example, an integrated circuit structure includes a vertical stack of horizontal nanowires over a sub-fin. The integrated circuit structure also includes a gate structure. The gate structure includes a first gate structure portion over the vertical stack of horizontal nanowires, a second gate structure portion laterally adjacent to the first gate structure portion, wherein the second gate structure portion is not over a channel structure, and a gate cut between the first gate structure portion and the second gate structure portion.

TECHNICAL FIELD

Embodiments of the disclosure are in the field of integrated circuitstructures and processing and, in particular, integrated circuitstructures having conductive structures in fin isolation regions andmethods of fabricating integrated circuit structures having conductivestructures in fin isolation regions.

BACKGROUND

For the past several decades, the scaling of features in integratedcircuits has been a driving force behind an ever-growing semiconductorindustry. Scaling to smaller and smaller features enables increaseddensities of functional units on the limited real estate ofsemiconductor chips. For example, shrinking transistor size allows forthe incorporation of an increased number of memory or logic devices on achip, lending to the fabrication of products with increased capacity.The drive for ever-more capacity, however, is not without issue. Thenecessity to optimize the performance of each device becomesincreasingly significant.

In the manufacture of integrated circuit devices, multi-gatetransistors, such as tri-gate transistors, have become more prevalent asdevice dimensions continue to scale down. In conventional processes,tri-gate transistors are generally fabricated on either bulk siliconsubstrates or silicon-on-insulator substrates. In some instances, bulksilicon substrates are preferred due to their lower cost and becausethey enable a less complicated tri-gate fabrication process. In anotheraspect, maintaining mobility improvement and short channel control asmicroelectronic device dimensions scale below the 10 nanometer (nm) nodeprovides a challenge in device fabrication. Nanowires used to fabricatedevices provide improved short channel control.

Scaling multi-gate and nanowire transistors has not been withoutconsequence, however. As the dimensions of these fundamental buildingblocks of microelectronic circuitry are reduced and as the sheer numberof fundamental building blocks fabricated in a given region isincreased, the constraints on the lithographic processes used to patternthese building blocks have become overwhelming. In particular, there maybe a trade-off between the smallest dimension of a feature patterned ina semiconductor stack (the critical dimension) and the spacing betweensuch features.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1F illustrates top-down angled cross-sectional viewsrepresenting various operations in a method of fabricating an integratedcircuit structure having a conductive structure in a fin isolationregion, in accordance with an embodiment of the present disclosure.

FIG. 2A illustrates a cross-sectional view of an integrated circuitstructure having a fin and a pre-metal gate dielectric plug, inaccordance with an embodiment of the present disclosure.

FIG. 2B illustrates a cross-sectional view of an integrated circuitstructure having a fin and a cut metal gate dielectric plug, inaccordance with an embodiment of the present disclosure.

FIG. 3A illustrates a cross-sectional view of an integrated circuitstructure having nanowires and a pre-metal gate dielectric plug, inaccordance with an embodiment of the present disclosure.

FIG. 3B illustrates a cross-sectional view of an integrated circuitstructure having nanowires and a cut metal gate dielectric plug, inaccordance with an embodiment of the present disclosure.

FIG. 4A illustrates a cross-sectional view of an integrated circuitstructure having nanowires and a pre-metal gate dielectric plug, inaccordance with an embodiment of the present disclosure.

FIG. 4B illustrates a cross-sectional view of an integrated circuitstructure having nanowires and a cut metal gate dielectric plug, inaccordance with an embodiment of the present disclosure.

FIGS. 5A-5C illustrates plan views of comparative integrated circuitstructures, in accordance with an embodiment of the present disclosure.

FIGS. 6A-6C illustrates cross-sectional views of comparative integratedcircuit structures, in accordance with an embodiment of the presentdisclosure.

FIGS. 7A-7J illustrates cross-sectional views of various operations in amethod of fabricating a gate-all-around integrated circuit structure, inaccordance with an embodiment of the present disclosure.

FIG. 8 illustrates a cross-sectional view of a non-planar integratedcircuit structure as taken along a gate line, in accordance with anembodiment of the present disclosure.

FIG. 9 illustrates cross-sectional views taken through nanowires andfins for a non-endcap architecture (left-hand side (a)) versus aself-aligned gate endcap (SAGE) architecture (right-hand side (b)), inaccordance with an embodiment of the present disclosure.

FIG. 10 illustrates cross-sectional views representing variousoperations in a method of fabricating a self-aligned gate endcap (SAGE)structure with gate-all-around devices, in accordance with an embodimentof the present disclosure.

FIG. 11A illustrates a three-dimensional cross-sectional view of ananowire-based integrated circuit structure, in accordance with anembodiment of the present disclosure.

FIG. 11B illustrates a cross-sectional source or drain view of thenanowire-based integrated circuit structure of FIG. 11A, as taken alongthe a-a′ axis, in accordance with an embodiment of the presentdisclosure.

FIG. 11C illustrates a cross-sectional channel view of thenanowire-based integrated circuit structure of FIG. 11A, as taken alongthe b-b′ axis, in accordance with an embodiment of the presentdisclosure.

FIG. 12 illustrates a computing device in accordance with oneimplementation of an embodiment of the disclosure.

FIG. 13 illustrates an interposer that includes one or more embodimentsof the disclosure.

DESCRIPTION OF THE EMBODIMENTS

Integrated circuit structures having conductive structures in finisolation regions, and methods of fabricating integrated circuitstructures having conductive structures in fin isolation regions, aredescribed. In the following description, numerous specific details areset forth, such as specific integration and material regimes, in orderto provide a thorough understanding of embodiments of the presentdisclosure. It will be apparent to one skilled in the art thatembodiments of the present disclosure may be practiced without thesespecific details. In other instances, well-known features, such asintegrated circuit design layouts, are not described in detail in orderto not unnecessarily obscure embodiments of the present disclosure.Furthermore, it is to be appreciated that the various embodiments shownin the Figures are illustrative representations and are not necessarilydrawn to scale.

Certain terminology may also be used in the following description forthe purpose of reference only, and thus are not intended to be limiting.For example, terms such as “upper”, “lower”, “above”, and “below” referto directions in the drawings to which reference is made. Terms such as“front”, “back”, “rear”, and “side” describe the orientation and/orlocation of portions of the component within a consistent but arbitraryframe of reference which is made clear by reference to the text and theassociated drawings describing the component under discussion. Suchterminology may include the words specifically mentioned above,derivatives thereof, and words of similar import.

Embodiments described herein may be directed to front-end-of-line (FEOL)semiconductor processing and structures. FEOL is the first portion ofintegrated circuit (IC) fabrication where the individual devices (e.g.,transistors, capacitors, resistors, etc.) are patterned in thesemiconductor substrate or layer. FEOL generally covers everything up to(but not including) the deposition of metal interconnect layers.Following the last FEOL operation, the result is typically a wafer withisolated transistors (e.g., without any wires).

Embodiments described herein may be directed to back-end-of-line (BEOL)semiconductor processing and structures. BEOL is the second portion ofIC fabrication where the individual devices (e.g., transistors,capacitors, resistors, etc.) are interconnected with wiring on thewafer, e.g., the metallization layer or layers. BEOL includes contacts,insulating layers (dielectrics), metal levels, and bonding sites forchip-to-package connections. In the BEOL part of the fabrication stagecontacts (pads), interconnect wires, vias and dielectric structures areformed. For modern IC processes, more than 10 metal layers may be addedin the BEOL.

Embodiments described below may be applicable to FEOL processing andstructures, BEOL processing and structures, or both FEOL and BEOLprocessing and structures. In particular, although an exemplaryprocessing scheme may be illustrated using a FEOL processing scenario,such approaches may also be applicable to BEOL processing. Likewise,although an exemplary processing scheme may be illustrated using a BEOLprocessing scenario, such approaches may also be applicable to FEOLprocessing.

One or more embodiments described herein are directed to integratedcircuit structures having conductive structures in fin isolationregions, which may be referred to as metal fin trim isolation (metalFTI). One or more embodiments described herein are directed togate-all-around devices with conductive structures in fin isolationregions. It is to be appreciated that, unless indicated otherwise,reference to nanowires herein can indicate nanowires or nanoribbons, oreven nanosheets. One or more embodiments described herein are directedto FinFET structures with conductive structures in fin isolationregions.

To provide context, a fin trim isolation (FTI) process is becoming verycomplex as the gate pitch and FIN (or wire stack) pitch is shrinking. Astandard FTI process involves fabrication of a plug in the gate andunderlying channel structures. The plug can negatively interfere with ametal gate process. In a standard FTI process, the FTI is filled withsilicon nitride (SiN) or silicon oxide or dioxide (SiO₂) which cancreate unwanted stress on the adjacent devices, which can add to devicevariability.

In accordance with one or more embodiments, an FTI opening is backfilledwith metal instead of a dielectric material. Embodiments may beimplemented to provide a process flow with fewer processing operationsand/or to reduce a negative impact on metal gate processing. Embodimentsmay be detectable may revealing an FTI structure filled with metaland/or such an FTI structure shorted to a backside source.

As an exemplary processing scheme, FIGS. 1A-1F illustrate top-downangled cross-sectional views representing various operations in a methodof fabricating an integrated circuit structure having a conductivestructure in a fin isolation region, in accordance with an embodiment ofthe present disclosure. It is to be appreciated that although describedin association with stacks of nanowires (or nanoribbons or nanosheets),semiconductor fins can also be covered by the embodiments.

Referring to FIG. 1A, a starting structure 100 includes sub-fins 104extending from a substrate 102, such as silicon sub-fins extending froma silicon substrate. The sub-fins 104 protrude through a shallow trenchisolation (STI) structure 106, such as a silicon oxide structure. Fins108 are above corresponding ones of the sub-fins 104. In one embodiment,each fin 108 includes alternating sacrificial layers 110 and nanowires112. The nanowires 112 may be referred to as a vertical arrangement ofhorizontally stacked nanowires, such as a vertical arrangement ofhorizontally stacked silicon nanowires. A liner dielectric layer 103,such as a silicon oxide liner, may be over the fins 108, as is depicted.It is to be appreciated that the example illustrated in FIG. 1A ismerely one example of a fin and sub-fin pairing.

Referring again to FIG. 1A, gate trenches 118 expose portions of thefins 108. Gate trenches 118 can be formed upon removal of a dummy gatematerial, such as polysilicon. Dummy gate lines may be fabricated adirect patterning, a pitch-halving approach (spacer-based), a pitchquartering approach, etc. Gate spacers 120 may then be formed alongsides of the dummy gate lines. The gate spacers 120 can remain followingremoval of the dummy gate material, as is depicted.

Referring again to FIG. 1A, epitaxial source or drain structures 128 canbe formed in openings in fins 108 at locations along a direction betweengate trenches 118, i.e., between gate spacers 120. A trench dielectric122 can be formed over the epitaxial source or drain structures 128, andmay be ultimately be removed during subsequent conductive trench contactformation. An internal gate spacer 130 can be included adjacent to theepitaxial source or drain structures 128. A portion 131 of gate spacermaterial can also be formed below epitaxial source or drain structures128 (e.g., prior to epitaxial growth), as is depicted. A protectivehelmet 132, such as a metal layer, can selectively be formed on the gatespacers 120 and the trench dielectric 122, as is depicted.

Referring to FIG. 1B, a hardmask material 134A, such as a carbon basedhardmask material, is formed over the structure of FIG. 1A. Aphotoresist layer or stack 134B is then formed to have an opening 136therein.

Referring to FIG. 1C, an etch process is performed through the opening136 to etch a trench through the hardmask material 134A and into one ofthe trench isolation structures 106, forming a trench 137 adjacent topatterned isolation structures 106A. The etching remove the portion ofthe middle fin 108 beneath the opening 136. The etching forms an etchedfin including etched nanowire portions 112A, as is depicted. The etchingcan also recess the corresponding sub-fin 104 to form etch sub-fin 104A,as is also depicted. In on embodiment, the protective helmet 132protects the gate spacers 120 and the trench dielectric 122 during theetching.

Referring again to FIG. 1C, the hardmask material 134A and thephotoresist layer or stack 134B are removed. The sacrificial layers 110are also removed from the fins 108, releasing the nanowires 112, as isdepicted.

Referring to FIG. 1D, a gate dielectric layer 140, such as a high-k gatedielectric layer, is formed over the structure of FIG. 1C. The gatedielectric layer 140 includes a portion 141 that is conformal along theexposed side of the etched fin, e.g., conformal along the exposed sidesof the etched nanowires 112A.

Referring to FIG. 1E, a gate electrode 142, such as a material stackincluding one or more conductive workfunction layers and a conductivefill material, is then formed on the gate dielectric layer 140. The gateelectrode 142 includes an extension portion 143 in the trench 137.

Referring to FIG. 1F, gate cuts are made in the structure of FIG. 1E.Gate plugs 144 are then formed in the gate cuts. In one embodiment, thegate cuts and, hence the gate plugs 144, expose the isolation structures106/106A, now labeled 106B. The gate cuts (and plugs) can form cut gateelectrode 142A (and cut extension portion 143A) isolated from cut gateelectrodes 142B, cut gate dielectric layer 140A, and cut gate spacers120A. In an embodiment, the cut gate electrode 142A (and cut extensionportion 143A) does not have an associated underlying channel structure(e.g., fin, nanowire stack, etc.), while each of the cut gate electrodes142B has a corresponding underlying channel structure (e.g., nanowire112 stacks), as is depicted. In an embodiment, each of the gate plugs144 includes a corresponding dielectric cap 145 thereon, as is depicted.

Referring again to FIG. 1F, a hardmask or protective layer 176 is formedover the front side of the structure. The structure is then subjected toback side processing to provide structure 170. For example, the backsideis planarized which can provide planarized trench isolation structures106B and planarized sub-fin structures 104B, as is depicted. A backsidedielectric layer 174 can then be formed on the resulting structure. Abackside conductive contact 172 can then be formed in the backsidedielectric layer 174. In one embodiment, the backside conductive contact172 electrically contacts the cut gate electrode 142A, e.g., forelectrical coupling cut gate electrode 142A to a backside source.

With reference again to FIG. 1F, in accordance with an embodiment of thepresent disclosure, an integrated circuit structure 170 includes avertical stack of horizontal nanowires (left or right 112) over asub-fin (left or right 104B). The integrated circuit structure 170 alsoincludes a gate structure 140B/142A/142B. The gate structure includes afirst gate structure portion (left or right 142B and 140B) over thevertical stack of horizontal nanowires (left or right 112). A secondgate structure portion 142B/140B is laterally adjacent to the first gatestructure portion (left or right 142B and 140B). The second gatestructure portion 142B/140B is not over a channel structure (e.g., fin,nanowire stack, etc.). A gate cut (e.g., at one of locations 144) isbetween the first gate structure portion (left or right 142B and 140B)and the second gate structure portion 142B/140B.

In one embodiment, the structure 170 further includes a backsideconductive contact 172 is coupled to the second gate structure portion142B/140B, e.g., to an extension portion 143A, as is depicted. In onesuch embodiment, the backside conductive contact 172 extends laterallybeneath the gate cut (e.g., at one of locations 144), as is depicted.

In one embodiment, the structure 170 further includes a dielectric gateplug (left or right 144) in the gate cut. In one such embodiment, thedielectric plug 144 is on an isolation structure (left 106B) laterallybetween the sub-fin (left 104B) and an extension portion 143A of thesecond gate structure portion 142B/140B, as is depicted.

In another aspect, in order to reduce a cell height in a future orscaled technology node, both the gate endcap and gate cut size needs toshrink. Gate cut prior to gate metal fill can limit the effective endcap available for work function and can become challenging for metalfill capability in tighter space. The defect can be worse for any gateend-to-end mis-registration creating even smaller endcap space. It is tobe appreciated that any of the gate cut/gate plug structures describedbelow may be suitable for the integrated circuit structure 170 describedin association with FIG. 1F, respectively.

In accordance with one or more embodiments of the present disclosure,addressing issues outlined above, a metal gate cut process isimplemented subsequent to completing gate dielectric and work functionmetal deposition and patterning.

Advantages for implementing approaches described herein can include aso-called “plug-last” approach with a result that a gate dielectriclayer (such as a high-k gate dielectric layer) is not deposited on agate plug sidewall, effectively saving additional room for work functionmetal deposition. By contrast, a metal gate fill material can pinchbetween the plug and fin during a so-called conventional “plug-first”approach. The space for metal fill can be narrower due to plugmis-registration in the latter approach, and can result in voids duringmetal fill. In embodiments described herein, using a “plug-last”approach, a work function metal deposition can be seamless (e.g., voidfree).

In accordance with one or more embodiments of the present disclosure, anintegrated circuit structure has a clean interface between a gate plugdielectric and a gate metal. It is to be appreciated that manyembodiments can benefit from approaches described herein, such asplug-last approaches. For example, a metal gate cut on a FinFET deviceis described below in association with FIG. 2B. A metal gate cut schemecan be implemented for a gate-all-around (GAA) device, such as describedbelow in association with FIGS. 3B and 4B. Additionally, a metal gatecut and plug formation may appear different based on the incomingstructure. For example, the plug may land on a shallow trench isolation(STI) structure, such as described in association with FIGS. 2B and 3B,or may land on a pre-fabricated gate wall made of dielectric, such asdescribed in association with FIG. 4B. A metal gate cut approach can beselective to a gate spacer dielectric, such as described in associationwith FIGS. 5B and 6B, or may not be selective to a gate spacer material,such as described in association with FIGS. 5C and 6C. A non-selectivemetal gate cut embodiment may need an alternate contact metal scheme toaccommodate a dielectric plug between epi source/drain. The plug etchselectivity to epi source/drain material is optional. However, in oneembodiment, if the epitaxial source/drain is exposed to a plug etch(e.g., due to device dimension), the etch can trim the source/drainanisotropically, such as described below in association with FIG. 5C.Such an approach may be implemented to achieve tight endcap spacing.

A dielectric gate plug can be fabricated for a FinFET device. As acomparative example, FIG. 2A illustrates a cross-sectional view of anintegrated circuit structure having a fin and a pre-metal gatedielectric plug, in accordance with an embodiment of the presentdisclosure. FIG. 2B illustrates a cross-sectional view of an integratedcircuit structure having a fin and a cut metal gate dielectric plug, inaccordance with an embodiment of the present disclosure.

Referring to FIG. 2A, an integrated circuit structure 200 includes a fin202 having a portion protruding above a shallow trench isolation (STI)structure 204. A gate dielectric material layer 206, such as a high-kgate dielectric layer, is over the protruding portion of the fin 202 andover the STI structure 204. It is to be appreciated that, although notdepicted, an oxidized portion of the fin 202 may be between theprotruding portion of the fin 202 and the gate dielectric material layer206 and may be included together with the gate dielectric material layer206 to form a gate dielectric structure. A conductive gate layer 208,such as a workfunction metal layer, is over the gate dielectric materiallayer 206, and may be directly on the gate dielectric material layer 206as is depicted. A conductive gate fill material 210 is over theconductive gate layer 208, and may be directly on the conductive gatelayer 208 as is depicted. A dielectric gate cap 212 is on the conductivegate fill material 210. A dielectric gate plug 214 is laterally spacedapart from the fin 202 and is on the STI structure 204. The gatedielectric material layer 206 and the conductive gate layer 208 arealong sides of the dielectric gate plug 214.

Referring to FIG. 2B, an integrated circuit structure 250 includes a fin252 having a portion protruding above a shallow trench isolation (STI)structure 254. A gate dielectric material layer 256, such as a high-kgate dielectric layer, is over the protruding portion of the fin 252 andover the STI structure 254. It is to be appreciated that, although notdepicted, an oxidized portion of the fin 252 may be between theprotruding portion of the fin 252 and the gate dielectric material layer256 and may be included together with the gate dielectric material layer256 to form a gate dielectric structure. A conductive gate layer 258,such as a workfunction metal layer, is over the gate dielectric materiallayer 256, and may be directly on the gate dielectric material layer 256as is depicted. A conductive gate fill material 260 is over theconductive gate layer 258, and may be directly on the conductive gatelayer 258 as is depicted. A dielectric gate cap 262 is on the conductivegate fill material 260.

In an embodiment, a dielectric gate plug 264 is laterally spaced apartfrom the fin 252 and is on, but is not through, the STI structure 254.As used throughout the disclosure, a dielectric plug referred to as “onbut not through” an STI structure can refer to a dielectric plug landedon a top or uppermost surface of the STI, or can refer to a plugextending into but not piercing the STI. In other embodiments, a plugdescribed herein can extend entirely through, or pierce, the STI.

In an embodiment, the gate dielectric material layer 256 and theconductive gate layer 258 are not along sides of the dielectric gateplug 264. Instead, the conductive gate fill material 260 is in contactwith the sides of the dielectric gate plug 264. As a result, a regionbetween the dielectric gate plug 264 and the fin 252 includes only onelayer of the gate dielectric material layer 256 and only one layer ofthe conductive gate layer 258, alleviating space constraints in such atight region of the structure 250. Alleviating space constraints canimprove metal fill and/or can facilitate patterning of multiple VTs.

Referring again to FIG. 2B, in an embodiment, the dielectric gate plug264 is formed after forming the gate dielectric material layer 256, theconductive gate layer 258, and the conductive gate fill material 260. Asa result, the gate dielectric material layer 256 and the conductive gatelayer 258 are not formed along sides of the dielectric gate plug 264. Inan embodiment, the dielectric gate plug 264 has an uppermost surfaceco-planar with an uppermost surface of the dielectric gate cap 262, asis depicted. In another embodiment, not depicted, a dielectric gate cap262 is not included, and the dielectric gate plug 264 has an uppermostsurface co-planar with an uppermost surface of the conductive gate fillmaterial 260, e.g., along a plane 280.

A dielectric gate plug can be fabricated for a nanowire device. As acomparative example, FIG. 3A illustrates a cross-sectional view of anintegrated circuit structure having nanowires and a pre-metal gatedielectric plug, in accordance with an embodiment of the presentdisclosure. FIG. 3B illustrates a cross-sectional view of an integratedcircuit structure having nanowires and a cut metal gate dielectric plug,in accordance with an embodiment of the present disclosure.

Referring to FIG. 3A, an integrated circuit structure 300 includes asub-fin 302 having a portion protruding above a shallow trench isolation(STI) structure 304. A plurality of horizontally stacked nanowires 305is over the sub-fin 302. A gate dielectric material layer 306, such as ahigh-k gate dielectric layer, is over the protruding portion of thesub-fin 302, over the STI structure 304, and surrounding thehorizontally stacked nanowires 305. It is to be appreciated that,although not depicted, an oxidized portion of the sub-fin 302 andhorizontally stacked nanowires 305 may be between the protruding portionof the sub-fin 302 and the gate dielectric material layer 306, andbetween the horizontally stacked nanowires 305 and the gate dielectricmaterial layer 306, and may be included together with the gatedielectric material layer 306 to form a gate dielectric structure. Aconductive gate layer 308, such as a workfunction metal layer, is overthe gate dielectric material layer 306, and may be directly on the gatedielectric material layer 306 as is depicted. A conductive gate fillmaterial 310 is over the conductive gate layer 308, and may be directlyon the conductive gate layer 308 as is depicted. A dielectric gate cap312 is on the conductive gate fill material 310. A dielectric gate plug314 is laterally spaced apart from the sub-fin 302 and the plurality ofhorizontally stacked nanowires 305, and is on the STI structure 304. Thegate dielectric material layer 306 and the conductive gate layer 308 arealong sides of the dielectric gate plug 314.

Referring to FIG. 3B, an integrated circuit structure 350 includes asub-fin 352 having a portion protruding above a shallow trench isolation(STI) structure 354. A plurality of horizontally stacked nanowires 355is over the sub-fin 352. A gate dielectric material layer 356, such as ahigh-k gate dielectric layer, is over the protruding portion of thesub-fin 352, over the STI structure 354, and surrounding thehorizontally stacked nanowires 355. It is to be appreciated that,although not depicted, an oxidized portion of the sub-fin 352 may bebetween the protruding portion of the sub-fin 352 and the gatedielectric material layer 356, and between the horizontally stackednanowires 355 and the gate dielectric material layer 356, and may beincluded together with the gate dielectric material layer 356 to form agate dielectric structure. A conductive gate layer 358, such as aworkfunction metal layer, is over the gate dielectric material layer356, and may be directly on the gate dielectric material layer 356 as isdepicted. A conductive gate fill material 360 is over the conductivegate layer 358, and may be directly on the conductive gate layer 358 asis depicted. A dielectric gate cap 362 is on the conductive gate fillmaterial 360. A dielectric gate plug 364 is laterally spaced apart fromthe sub-fin 352 and the plurality of horizontally stacked nanowires 355,and is on, but is not through, the STI structure 354. However, the gatedielectric material layer 356 and the conductive gate layer 358 are notalong sides of the dielectric gate plug 364. Instead, the conductivegate fill material 360 is in contact with the sides of the dielectricgate plug 364. As a result, a region between the dielectric gate plug364 and the combination of the sub-fin 352 and the plurality ofhorizontally stacked nanowires 355 includes only one layer of the gatedielectric material layer 356 and only one layer of the conductive gatelayer 358 alleviating space constraints in such a tight region of thestructure 350.

Referring again to FIG. 3B, in an embodiment, the dielectric gate plug364 is formed after forming the gate dielectric material layer 356, theconductive gate layer 358, and the conductive gate fill material 360. Asa result, the gate dielectric material layer 356 and the conductive gatelayer 358 are not formed along sides of the dielectric gate plug 364. Inan embodiment, the dielectric gate plug 364 has an uppermost surfaceco-planar with an uppermost surface of the dielectric gate cap 362, asis depicted. In another embodiment, not depicted, a dielectric gate cap362 is not included, and the dielectric gate plug 364 has an uppermostsurface co-planar with an uppermost surface of the conductive gate fillmaterial 360, e.g., along a plane 380.

A dielectric gate plug can be fabricated on a gate endcap wall for ananowire device. As a comparative example, FIG. 4A illustrates across-sectional view of an integrated circuit structure having nanowiresand a pre-metal gate dielectric plug, in accordance with an embodimentof the present disclosure. FIG. 4B illustrates a cross-sectional view ofan integrated circuit structure having nanowires and a cut metal gatedielectric plug, in accordance with an embodiment of the presentdisclosure.

Referring to FIG. 4A, an integrated circuit structure 400 includes asub-fin 402 having a portion protruding above a shallow trench isolation(STI) structure 404. A plurality of horizontally stacked nanowires 405is over the sub-fin 402. A gate end cap structure 403, such as aself-aligned gate end cap structure, is on the STI structure 404 and islaterally spaced apart from the sub-fin 402 and the plurality ofhorizontally stacked nanowires 405. A gate dielectric material layer406, such as a high-k gate dielectric layer, is over the protrudingportion of the sub-fin 402, over the STI structure 404, along sides ofthe gate end cap structure 403, and surrounding the horizontally stackednanowires 405. It is to be appreciated that, although not depicted, anoxidized portion of the sub-fin 402 and horizontally stacked nanowires405 may be between the protruding portion of the sub-fin 402 and thegate dielectric material layer 406, and between the horizontally stackednanowires 405 and the gate dielectric material layer 406, and may beincluded together with the gate dielectric material layer 406 to form agate dielectric structure. A conductive gate layer 408, such as aworkfunction metal layer, is over the gate dielectric material layer406, and may be directly on the gate dielectric material layer 406 as isdepicted. A conductive gate fill material 410 is over the conductivegate layer 408, and may be directly on the conductive gate layer 408 asis depicted. A dielectric gate cap 412 is on the conductive gate fillmaterial 410. A dielectric gate plug 414 is on the gate end capstructure 403. The gate dielectric material layer 406 and the conductivegate layer 408 are along sides of the dielectric gate plug 414.

Referring to FIG. 4B, an integrated circuit structure 450 includes asub-fin 452 having a portion protruding above a shallow trench isolation(STI) structure 454. A plurality of horizontally stacked nanowires 455is over the sub-fin 452. A gate end cap structure 453, such as aself-aligned gate end cap structure, is on, but is not through, the STIstructure 454 and is laterally spaced apart from the sub-fin 452 and theplurality of horizontally stacked nanowires 455. A gate dielectricmaterial layer 456, such as a high-k gate dielectric layer, is over theprotruding portion of the sub-fin 452, over the STI structure 454, alongsides of the gate end cap structure 453, and surrounding thehorizontally stacked nanowires 455. It is to be appreciated that,although not depicted, an oxidized portion of the sub-fin 452 may bebetween the protruding portion of the sub-fin 452 and the gatedielectric material layer 456, and between the horizontally stackednanowires 455 and the gate dielectric material layer 456, and may beincluded together with the gate dielectric material layer 456 to form agate dielectric structure. A conductive gate layer 458, such as aworkfunction metal layer, is over the gate dielectric material layer456, and may be directly on the gate dielectric material layer 456 as isdepicted. A conductive gate fill material 460 is over the conductivegate layer 458, and may be directly on the conductive gate layer 458 asis depicted. A dielectric gate cap 462 is on the conductive gate fillmaterial 460. A dielectric gate plug 464 is on the gate end capstructure 453. However, the gate dielectric material layer 456 and theconductive gate layer 458 are not along sides of the dielectric gateplug 464. Instead, the conductive gate fill material 460 is in contactwith the sides of the dielectric gate plug 464.

Referring again to FIG. 4B, in an embodiment, the dielectric gate plug464 is formed after forming the gate dielectric material layer 456, theconductive gate layer 458, and the conductive gate fill material 460. Asa result, the gate dielectric material layer 456 and the conductive gatelayer 458 are not formed along sides of the dielectric gate plug 464. Inan embodiment, the dielectric gate plug 464 has an uppermost surfaceco-planar with an uppermost surface of the dielectric gate cap 462, asis depicted. In another embodiment, not depicted, a dielectric gate cap462 is not included, and the dielectric gate plug 464 has an uppermostsurface co-planar with an uppermost surface of the conductive gate fillmaterial 460, e.g., along a plane 480.

In another aspect, selective or non-selective versions of a metal gatecut can be implemented. As an example, FIGS. 5A-5C illustrate plan viewsof comparative integrated circuit structures, in accordance with anembodiment of the present disclosure. FIG. 5A represents a conventional‘plug-first’ approach illustrating two gate plugs in neighboring gates.FIG. 5B represents a selective metal gate cut approach illustrating twogate plugs in neighboring gates. FIG. 5C represents a non-selectivemetal gate cut approach illustrating one long gate plug across multiplegates.

Referring to FIG. 5A, an integrated circuit structure 500 includes gatelines between dielectric spacers 517 and conductive source or draincontacts 518. Each gate line includes a gate dielectric material layer506, a conductive gate layer 508, such as a workfunction metal layer,and a conductive gate fill material 510. Dielectric gate plugs 514 canbreak up portions of a corresponding gate line. The dielectric gateplugs 514 are in contact with the conductive gate layer 508, but notwith the gate dielectric material layer 506 or the conductive gate fillmaterial 510. The plan view of FIG. 5A may correspond to the structuresof FIG. 2A, 3A, or 4A. It is to be appreciated that, although referredto above as conductive source or drain contacts 518, at earlier stagesof the process or in other locations of an integrated circuit structure,a placeholder dielectric or a dielectric plug is in the place ofconductive source or drain contacts 518.

Referring to FIG. 5B, an integrated circuit structure 550 includes gatelines between dielectric spacers 567 and conductive source or draincontacts 568. Each gate line includes a gate dielectric material layer556, a conductive gate layer 558, such as a workfunction metal layer,and a conductive gate fill material 560. Dielectric gate plugs 564 canbreak up portions of a corresponding gate line. The dielectric gateplugs 564 are in contact with the conductive gate fill material 560. Theplan view of FIG. 5B may correspond to the structures of FIG. 2B, 3B, or4B. It is to be appreciated that, although referred to above asconductive source or drain contacts 568, at earlier stages of theprocess or in other locations of an integrated circuit structure, aplaceholder dielectric or a dielectric plug is in the place ofconductive source or drain contacts 568.

Referring to FIG. 5C, an integrated circuit structure 570 includes gatelines between dielectric spacers 587 and conductive source or draincontacts 588. Each gate line includes a gate dielectric material layer576, a conductive gate layer 578, such as a workfunction metal layer,and a conductive gate fill material 580. A single dielectric gate plug584 can break up portions of the gate lines, and may extend throughdielectric spacers 587, and even partially or fully into one or more ofthe conductive source or drain contacts 588. The dielectric gate plug584 is in contact with the conductive gate fill material 580. The planview of FIG. 5C may correspond to the structures of FIG. 2B, 3B, or 4B.

Referring again to FIG. 5C, it is to be appreciated that, althoughreferred to above as conductive source or drain contacts 588, at earlierstages of the process or in other locations of an integrated circuitstructure, a placeholder dielectric or a dielectric plug is in the placeof conductive source or drain contacts 588. In an embodiment, an etchused to form an opening in which single dielectric gate plug 584 isultimately formed is referred to as a non-selective etch. In the casethat conductive source or drain contacts 588 are already formed, thenon-selective etch can etch into the conductive material of theconductive source or drain contacts 588. In other embodiments, in thecase that a placeholder dielectric or a dielectric plug is in the placeof conductive source or drain contacts 588 the non-selective etch canetch into the placeholder dielectric or a dielectric plug. In eithercase, the non-selective etch can etch through, and possibly separate, anepitaxial semiconductor material of source or drain regions formedbeneath the location of conductive source or drain contacts 588. In thecase that conductive source or drain contacts 588 have already beenformed, the epitaxial semiconductor material of the source or drainregions may include silicided portions.

FIGS. 6A-6C illustrate cross-sectional views of comparative integratedcircuit structures, in accordance with an embodiment of the presentdisclosure. FIG. 6A represents a conventional ‘plug-first’ approach.FIG. 6B represents a selective metal gate cut approach. FIG. 6Crepresents a non-selective metal gate cut approach.

Referring to FIG. 6A, an integrated circuit structure 600 includes adielectric gate plug 614 between dielectric spacers 617 and conductivesource or drain contacts 618. The cross-sectional view of FIG. 6A may bean orthogonal view corresponding to the structures of FIG. 2A, 3A, 4A or5A.

Referring to FIG. 6B, an integrated circuit structure 650 includes adielectric gate plug 664 between dielectric spacers 667 and conductivesource or drain contacts 668. The cross-sectional view of FIG. 6B may bean orthogonal view corresponding to the structures of FIG. 2B, 3B, 4B or5B.

Referring to FIG. 6C, an integrated circuit structure 670 includes asingle dielectric gate plug 684 between conductive source or draincontacts 688. Dashed box 690 shows where a corresponding discrete gateplug, such as gate plug 664 would be aligned in the case of FIG. 6B.Dashed boxes 692 show where non-recessed source or drain contacts 668would be aligned in the case of FIG. 6B. The regions between dashed box690 and dashed boxes 692 show where dielectric spacers 667 would bepresent in the case of FIG. 6B. The cross-sectional view of FIG. 6C maybe an orthogonal view corresponding to the structures of FIG. 2B, 3B, 4Bor 5C.

In an embodiment, a metal work function can be: (a) a same metal systemin NMOS and PMOS, (b) different metal system between NMOS and PMOS,and/or (c) single material or multi-layer metals (e.g.: W, TiN,TixAlyCz, TaN, Mo, MoN). In an embodiment, a metal cut etch chemistryincludes chlorine-containing or fluorine-containing etchants, withpossible additional carbon- or silicon-containing components providingpassivation.

It is to be appreciated that the embodiments described herein can alsoinclude other implementations such as nanowires and/or nanoribbons withvarious widths, thicknesses and/or materials including but not limitedto Si and SiGe. For example, group III-V materials may be used.

It is to be appreciated that, in a particular embodiment, nanowires ornanoribbons, or sacrificial intervening layers, may be composed ofsilicon. As used throughout, a silicon layer may be used to describe asilicon material composed of a very substantial amount of, if not all,silicon. However, it is to be appreciated that, practically, 100% pureSi may be difficult to form and, hence, could include a tiny percentageof carbon, germanium or tin. Such impurities may be included as anunavoidable impurity or component during deposition of Si or may“contaminate” the Si upon diffusion during post deposition processing.As such, embodiments described herein directed to a silicon layer mayinclude a silicon layer that contains a relatively small amount, e.g.,“impurity” level, non-Si atoms or species, such as Ge, C or Sn. It is tobe appreciated that a silicon layer as described herein may be undopedor may be doped with dopant atoms such as boron, phosphorous or arsenic.

It is to be appreciated that, in a particular embodiment, nanowires ornanoribbons, or sacrificial intervening layers, may be composed ofsilicon germanium. As used throughout, a silicon germanium layer may beused to describe a silicon germanium material composed of substantialportions of both silicon and germanium, such as at least 5% of both. Insome embodiments, the amount of germanium is greater than the amount ofsilicon. In particular embodiments, a silicon germanium layer includesapproximately 60% germanium and approximately 40% silicon (Si₄₀Ge₆₀). Inother embodiments, the amount of silicon is greater than the amount ofgermanium. In particular embodiments, a silicon germanium layer includesapproximately 30% germanium and approximately 70% silicon (Si₇₀Ge₃₀). Itis to be appreciated that, practically, 100% pure silicon germanium(referred to generally as SiGe) may be difficult to form and, hence,could include a tiny percentage of carbon or tin. Such impurities may beincluded as an unavoidable impurity or component during deposition ofSiGe or may “contaminate” the SiGe upon diffusion during post depositionprocessing. As such, embodiments described herein directed to a silicongermanium layer may include a silicon germanium layer that contains arelatively small amount, e.g., “impurity” level, non-Ge and non-Si atomsor species, such as carbon or tin. It is to be appreciated that asilicon germanium layer as described herein may be undoped or may bedoped with dopant atoms such as boron, phosphorous or arsenic.

It is to be appreciated that, in a particular embodiment, nanowires ornanoribbons, or sacrificial intervening layers, may be composed ofgermanium. As used throughout, a germanium layer may be used to describea germanium material composed of a very substantial amount of, if notall, germanium. However, it is to be appreciated that, practically, 100%pure Si may be difficult to form and, hence, could include a tinypercentage of carbon, germanium or tin. Such impurities may be includedas an unavoidable impurity or component during deposition of Si or may“contaminate” the Si upon diffusion during post deposition processing.As such, embodiments described herein directed to a germanium layer mayinclude a germanium layer that contains a relatively small amount, e.g.,“impurity” level, non-Si atoms or species, such as Si, C or Sn. It is tobe appreciated that a germanium layer as described herein may be undopedor may be doped with dopant atoms such as boron, phosphorous or arsenic.

In another aspect, in order to enable access to and/or fabricate aconductive structure in a fin isolation region, integrated circuitstructures described herein may be fabricated using a backside reveal offront-side structures fabrication approach. In some exemplaryembodiments, reveal of the backside of a transistor or other devicestructure entails wafer-level backside processing. In contrast to aconventional TSV-type technology, a reveal of the backside of atransistor as described herein may be performed at the density of thedevice cells, and even within sub-regions of a device. Furthermore, sucha reveal of the backside of a transistor may be performed to removesubstantially all of a donor substrate upon which a device layer wasdisposed during front-side device processing. As such, a microns-deepTSV becomes unnecessary with the thickness of semiconductor in thedevice cells following a reveal of the backside of a transistorpotentially being only tens or hundreds of nanometers.

Reveal techniques described herein may enable a paradigm shift from“bottom-up” device fabrication to “center-out” fabrication, where the“center” is any layer that is employed in front-side fabrication,revealed from the backside, and again employed in backside fabrication.Processing of both a front-side and revealed backside of a devicestructure may address many of the challenges associated with fabricating3D ICs when primarily relying on front-side processing.

A reveal of the backside of a transistor approach may be employed forexample to remove at least a portion of a carrier layer and interveninglayer of a donor-host substrate assembly. The process flow begins withan input of a donor-host substrate assembly. A thickness of a carrierlayer in the donor-host substrate is polished (e.g., CMP) and/or etchedwith a wet or dry (e.g., plasma) etch process. Any grind, polish, and/orwet/dry etch process known to be suitable for the composition of thecarrier layer may be employed. For example, where the carrier layer is agroup IV semiconductor (e.g., silicon) a CMP slurry known to be suitablefor thinning the semiconductor may be employed. Likewise, any wetetchant or plasma etch process known to be suitable for thinning thegroup IV semiconductor may also be employed.

In some embodiments, the above is preceded by cleaving the carrier layeralong a fracture plane substantially parallel to the intervening layer.The cleaving or fracture process may be utilized to remove a substantialportion of the carrier layer as a bulk mass, reducing the polish or etchtime needed to remove the carrier layer. For example, where a carrierlayer is 400-900 μm in thickness, 100-700 μm may be cleaved off bypracticing any blanket implant known to promote a wafer-level fracture.In some exemplary embodiments, a light element (e.g., H, He, or Li) isimplanted to a uniform target depth within the carrier layer where thefracture plane is desired. Following such a cleaving process, thethickness of the carrier layer remaining in the donor-host substrateassembly may then be polished or etched to complete removal.Alternatively, where the carrier layer is not fractured, the grind,polish and/or etch operation may be employed to remove a greaterthickness of the carrier layer.

Next, exposure of an intervening layer is detected. Detection is used toidentify a point when the backside surface of the donor substrate hasadvanced to nearly the device layer. Any endpoint detection techniqueknown to be suitable for detecting a transition between the materialsemployed for the carrier layer and the intervening layer may bepracticed. In some embodiments, one or more endpoint criteria are basedon detecting a change in optical absorbance or emission of the backsidesurface of the donor substrate during the polishing or etchingperformance. In some other embodiments, the endpoint criteria areassociated with a change in optical absorbance or emission of byproductsduring the polishing or etching of the donor substrate backside surface.For example, absorbance or emission wavelengths associated with thecarrier layer etch byproducts may change as a function of the differentcompositions of the carrier layer and intervening layer. In otherembodiments, the endpoint criteria are associated with a change in massof species in byproducts of polishing or etching the backside surface ofthe donor substrate. For example, the byproducts of processing may besampled through a quadrupole mass analyzer and a change in the speciesmass may be correlated to the different compositions of the carrierlayer and intervening layer. In another exemplary embodiment, theendpoint criteria is associated with a change in friction between abackside surface of the donor substrate and a polishing surface incontact with the backside surface of the donor substrate.

Detection of the intervening layer may be enhanced where the removalprocess is selective to the carrier layer relative to the interveninglayer as non-uniformity in the carrier removal process may be mitigatedby an etch rate delta between the carrier layer and intervening layer.Detection may even be skipped if the grind, polish and/or etch operationremoves the intervening layer at a rate sufficiently below the rate atwhich the carrier layer is removed. If an endpoint criteria is notemployed, a grind, polish and/or etch operation of a predetermined fixedduration may stop on the intervening layer material if the thickness ofthe intervening layer is sufficient for the selectivity of the etch. Insome examples, the carrier etch rate: intervening layer etch rate is3:1-10:1, or more.

Upon exposing the intervening layer, at least a portion of theintervening layer may be removed. For example, one or more componentlayers of the intervening layer may be removed. A thickness of theintervening layer may be removed uniformly by a polish, for example.Alternatively, a thickness of the intervening layer may be removed witha masked or blanket etch process. The process may employ the same polishor etch process as that employed to thin the carrier, or may be adistinct process with distinct process parameters. For example, wherethe intervening layer provides an etch stop for the carrier removalprocess, the latter operation may employ a different polish or etchprocess that favors removal of the intervening layer over removal of thedevice layer. Where less than a few hundred nanometers of interveninglayer thickness is to be removed, the removal process may be relativelyslow, optimized for across-wafer uniformity, and more preciselycontrolled than that employed for removal of the carrier layer. A CHIPprocess employed may, for example employ a slurry that offers very highselectively (e.g., 100:1-300:1, or more) between semiconductor (e.g.,silicon) and dielectric material (e.g., SiO) surrounding the devicelayer and embedded within the intervening layer, for example, aselectrical isolation between adjacent device regions.

For embodiments where the device layer is revealed through completeremoval of the intervening layer, backside processing may commence on anexposed backside of the device layer or specific device regions therein. In some embodiments, the backside device layer processing includes afurther polish or wet/dry etch through a thickness of the device layerdisposed between the intervening layer and a device region previouslyfabricated in the device layer, such as a source or drain region.

In some embodiments where the carrier layer, intervening layer, ordevice layer backside is recessed with a wet and/or plasma etch, such anetch may be a patterned etch or a materially selective etch that impartssignificant non-planarity or topography into the device layer backsidesurface. As described further below, the patterning may be within adevice cell (i.e., “intra-cell” patterning) or may be across devicecells (i.e., “inter-cell” patterning). In some patterned etchembodiments, at least a partial thickness of the intervening layer isemployed as a hard mask for backside device layer patterning. Hence, amasked etch process may preface a correspondingly masked device layeretch.

The above described processing scheme may result in a donor-hostsubstrate assembly that includes IC devices that have a backside of anintervening layer, a backside of the device layer, and/or backside ofone or more semiconductor regions within the device layer, and/orfront-side metallization revealed. Additional backside processing of anyof these revealed regions may then be performed during downstreamprocessing.

Described below are various devices and processing schemes that may beused to fabricate a device that can be integrated with a conductivestructure in a fin isolation region. It is to be appreciated that theexemplary embodiments need not necessarily require all featuresdescribed, or may include more features than are described. For example,nanowire release processing may be performed through a replacement gatetrench. Examples of such release processes are described below.Additionally, in yet another aspect, backend (BE) interconnect scalingcan result in lower performance and higher manufacturing cost due topatterning complexity. Embodiments described herein may be implementedto enable front-side and backside interconnect integration for nanowiretransistors. Embodiments described herein may provide an approach toachieve a relatively wider interconnect pitch. The result may beimproved product performance and lower patterning costs. Embodiments maybe implemented to enable robust functionality of scaled nanowire ornanoribbon transistors with low power and high performance.

One or more embodiments described herein are directed dual epitaxial(EPI) connections for nanowire or nanoribbon transistors using partialsource or drain (SD) and asymmetric trench contact (TCN) depth. In anembodiment, an integrated circuit structure is fabricated by formingsource-drain openings of nanowire/nanoribbon transistors which arepartially filled with SD epitaxy. A remainder of the opening is filledwith a conductive material. Deep trench formation on one of the sourceor drain side enables direct contact to a backside interconnect level.

As an exemplary process flow for fabricating a gate-all-around device ofa gate-all-around integrated circuit structure, FIGS. 7A-7J illustratescross-sectional views of various operations in a method of fabricating agate-all-around integrated circuit structure, in accordance with anembodiment of the present disclosure.

Referring to FIG. 7A, a method of fabricating an integrated circuitstructure includes forming a starting stack which includes alternatingsacrificial layers 704 and nanowires 706 above a fin 702, such as asilicon fin. The nanowires 706 may be referred to as a verticalarrangement of nanowires. A protective cap 708 may be formed above thealternating sacrificial layers 704 and nanowires 706, as is depicted. Arelaxed buffer layer 752 and a defect modification layer 750 may beformed beneath the alternating sacrificial layers 704 and nanowires 706,as is also depicted.

Referring to FIG. 7B, a gate stack 710 is formed over the verticalarrangement of horizontal nanowires 706. Portions of the verticalarrangement of horizontal nanowires 706 are then released by removingportions of the sacrificial layers 704 to provide recessed sacrificiallayers 704′ and cavities 712, as is depicted in FIG. 7C.

It is to be appreciated that the structure of FIG. 7C may be fabricatedto completion without first performing the deep etch and asymmetriccontact processing described below. In either case (e.g., with orwithout asymmetric contact processing), in an embodiment, a fabricationprocess involves use of a process scheme that provides a gate-all-aroundintegrated circuit structure having epitaxial nubs, which may bevertically discrete source or drain structures.

Referring to FIG. 7D, upper gate spacers 714 are formed at sidewalls ofthe gate structure 710. Cavity spacers 716 are formed in the cavities712 beneath the upper gate spacers 714. A deep trench contact etch isthen optionally performed to form trenches 718 and to form recessednanowires 706′. A patterned relaxed buffer layer 752′ and a patterneddefect modification layer 750′ may also be present, as is depicted.

A sacrificial material 720 is then formed in the trenches 718, as isdepicted in FIG. 7E. In other process schemes, an isolated trench bottomor silicon trench bottom may be used.

Referring to FIG. 7F, a first epitaxial source or drain structure (e.g.,left-hand features 722) is formed at a first end of the verticalarrangement of horizontal nanowires 706′. A second epitaxial source ordrain structure (e.g., right-hand features 722) is formed at a secondend of the vertical arrangement of horizontal nanowires 706′. In anembodiment, as depicted, the epitaxial source or drain structures 722are vertically discrete source or drain structures and may be referredto as epitaxial nubs.

An inter-layer dielectric (ILD) material 724 is then formed at the sidesof the gate electrode 710 and adjacent the source or drain structures722, as is depicted in FIG. 7G. Referring to FIG. 7H, a replacement gateprocess is used to form a permanent gate dielectric 728 and a permanentgate electrode 726. The ILD material 724 is then removed, as is depictedin FIG. 7I. The sacrificial material 720 is then removed from one of thesource drain locations (e.g., right-hand side) to form trench 732, butis not removed from the other of the source drain locations to formtrench 730.

Referring to FIG. 7J, a first conductive contact structure 734 is formedcoupled to the first epitaxial source or drain structure (e.g.,left-hand features 722). A second conductive contact structure 736 isformed coupled to the second epitaxial source or drain structure (e.g.,right-hand features 722). The second conductive contact structure 736 isformed deeper along the fin 702 than the first conductive contactstructure 734. In an embodiment, although not depicted in FIG. 7J, themethod further includes forming an exposed surface of the secondconductive contact structure 736 at a bottom of the fin 702. Conductivecontacts may include a contact resistance reducing layer and a primarycontact electrode layer, where examples can include Ti, Ni, Co (for theformer and W, Ru, Co for the latter.)

In an embodiment, the second conductive contact structure 736 is deeperalong the fin 702 than the first conductive contact structure 734, as isdepicted. In one such embodiment, the first conductive contact structure734 is not along the fin 702, as is depicted. In another suchembodiment, not depicted, the first conductive contact structure 734 ispartially along the fin 702.

In an embodiment, the second conductive contact structure 736 is alongan entirety of the fin 702. In an embodiment, although not depicted, inthe case that the bottom of the fin 702 is exposed by a backsidesubstrate removal process, the second conductive contact structure 736has an exposed surface at a bottom of the fin 702.

In an embodiment, the structure of FIG. 7J, or related structures ofFIGS. 7A-7J, can be fabricated to include a conductive structures in afin isolation region, examples of which are described above.

It is to be appreciated that the structures resulting from the aboveexemplary processing schemes may be used in a same or similar form forsubsequent processing operations to complete device fabrication, such asPMOS and/or NMOS device fabrication. As an example of a completeddevice, FIG. 8 illustrates a cross-sectional view of a non-planarintegrated circuit structure as taken along a gate line, in accordancewith an embodiment of the present disclosure.

Referring to FIG. 8 , a semiconductor structure or device 800 includes anon-planar active region (e.g., a fin structure including protruding finportion 804 and sub-fin region 805) within a trench isolation region806. In an embodiment, instead of a solid fin, the non-planar activeregion is separated into nanowires (such as nanowires 804A and 804B)above sub-fin region 805, as is represented by the dashed lines. Ineither case, for ease of description for non-planar integrated circuitstructure 800, a non-planar active region 804 is referenced below as aprotruding fin portion. In an embodiment, the sub-fin region 805 alsoincludes a relaxed buffer layer 842 and a defect modification layer 840,as is depicted.

A gate line 808 is disposed over the protruding portions 804 of thenon-planar active region (including, if applicable, surroundingnanowires 804A and 804B), as well as over a portion of the trenchisolation region 806. As shown, gate line 808 includes a gate electrode850 and a gate dielectric layer 852. In one embodiment, gate line 808may also include a dielectric cap layer 854. A gate contact 814, andoverlying gate contact via 816 are also seen from this perspective,along with an overlying metal interconnect 860, all of which aredisposed in inter-layer dielectric stacks or layers 870. Also seen fromthe perspective of FIG. 8 , the gate contact 814 is, in one embodiment,disposed over trench isolation region 806, but not over the non-planaractive regions. In another embodiment, the gate contact 814 is over thenon-planar active regions.

In an embodiment, the semiconductor structure or device 800 is anon-planar device such as, but not limited to, a fin-FET device, atri-gate device, a nanoribbon device, or a nanowire device. In such anembodiment, a corresponding semiconducting channel region is composed ofor is formed in a three-dimensional body. In one such embodiment, thegate electrode stacks of gate lines 808 surround at least a top surfaceand a pair of sidewalls of the three-dimensional body.

As is also depicted in FIG. 8 , in an embodiment, an interface 880exists between a protruding fin portion 804 and sub-fin region 805. Theinterface 880 can be a transition region between a doped sub-fin region805 and a lightly or undoped upper fin portion 804. In one suchembodiment, each fin is approximately 10 nanometers wide or less, andsub-fin dopants are optionally supplied from an adjacent solid statedoping layer at the sub-fin location. In a particular such embodiment,each fin is less than 10 nanometers wide.

Although not depicted in FIG. 8 , it is to be appreciated that source ordrain regions of or adjacent to the protruding fin portions 804 are oneither side of the gate line 808, i.e., into and out of the page. In oneembodiment, the material of the protruding fin portions 804 in thesource or drain locations is removed and replaced with anothersemiconductor material, e.g., by epitaxial deposition to form epitaxialsource or drain structures. The source or drain regions may extend belowthe height of dielectric layer of trench isolation region 806, i.e.,into the sub-fin region 805. In accordance with an embodiment of thepresent disclosure, the more heavily doped sub-fin regions, i.e., thedoped portions of the fins below interface 880, inhibits source to drainleakage through this portion of the bulk semiconductor fins. In anembodiment, the source and drain regions have associated asymmetricsource and drain contact structures, as described above in associationwith FIG. 7J.

With reference again to FIG. 8 , in an embodiment, fins 804/805 (and,possibly nanowires 804A and 804B) are composed of a crystalline silicongermanium layer which may be doped with a charge carrier, such as butnot limited to phosphorus, arsenic, boron, gallium or a combinationthereof.

In an embodiment, trench isolation region 806, and trench isolationregions (trench isolations structures or trench isolation layers)described throughout, may be composed of a material suitable toultimately electrically isolate, or contribute to the isolation of,portions of a permanent gate structure from an underlying bulk substrateor isolate active regions formed within an underlying bulk substrate,such as isolating fin active regions. For example, in one embodiment,trench isolation region 806 is composed of a dielectric material suchas, but not limited to, silicon dioxide, silicon oxy-nitride, siliconnitride, or carbon-doped silicon nitride.

Gate line 808 may be composed of a gate electrode stack which includes agate dielectric layer 852 and a gate electrode layer 850. In anembodiment, the gate electrode of the gate electrode stack is composedof a metal gate and the gate dielectric layer is composed of a high-kmaterial. For example, in one embodiment, the gate dielectric layer 852is composed of a material such as, but not limited to, hafnium oxide,hafnium oxy-nitride, hafnium silicate, lanthanum oxide, zirconium oxide,zirconium silicate, tantalum oxide, barium strontium titanate, bariumtitanate, strontium titanate, yttrium oxide, aluminum oxide, leadscandium tantalum oxide, lead zinc niobate, or a combination thereof.Furthermore, a portion of gate dielectric layer 852 may include a layerof native oxide formed from the top few layers of the substrate fin 804.In an embodiment, the gate dielectric layer 852 is composed of a tophigh-k portion and a lower portion composed of an oxide of asemiconductor material. In one embodiment, the gate dielectric layer 852is composed of a top portion of hafnium oxide and a bottom portion ofsilicon dioxide or silicon oxy-nitride. In some implementations, aportion of the gate dielectric is a “U”-shaped structure that includes abottom portion substantially parallel to the surface of the substrateand two sidewall portions that are substantially perpendicular to thetop surface of the substrate.

In one embodiment, the gate electrode layer 850 is composed of a metallayer such as, but not limited to, metal nitrides, metal carbides, metalsilicides, metal aluminides, hafnium, zirconium, titanium, tantalum,aluminum, ruthenium, palladium, platinum, cobalt, nickel or conductivemetal oxides. In a specific embodiment, the gate electrode layer 850 iscomposed of a non-workfunction-setting fill material formed above ametal workfunction-setting layer. The gate electrode layer 850 mayconsist of a P-type workfunction metal or an N-type workfunction metal,depending on whether the transistor is to be a PMOS or an NMOStransistor. In some implementations, the gate electrode layer 850 mayconsist of a stack of two or more metal layers, where one or more metallayers are workfunction metal layers and at least one metal layer is aconductive fill layer. For a PMOS transistor, metals that may be usedfor the gate electrode include, but are not limited to, ruthenium,palladium, platinum, cobalt, nickel, tungsten and conductive metaloxides, e.g., ruthenium oxide. A P-type metal layer will enable theformation of a PMOS gate electrode with a workfunction that is betweenabout 4.9 eV and about 5.2 eV. For an NMOS transistor, metals that maybe used for the gate electrode include, but are not limited to, hafnium,zirconium, titanium, tantalum, aluminum, alloys of these metals, andcarbides of these metals such as hafnium carbide, zirconium carbide,titanium carbide, tantalum carbide, and aluminum carbide. An N-typemetal layer will enable the formation of an NMOS gate electrode with aworkfunction that is between about 3.9 eV and about 4.2 eV. In someimplementations, the gate electrode may consist of a “U”-shapedstructure that includes a bottom portion substantially parallel to thesurface of the substrate and two sidewall portions that aresubstantially perpendicular to the top surface of the substrate. Inanother implementation, at least one of the metal layers that form thegate electrode may simply be a planar layer that is substantiallyparallel to the top surface of the substrate and does not includesidewall portions substantially perpendicular to the top surface of thesubstrate. In further implementations of the disclosure, the gateelectrode may consist of a combination of U-shaped structures andplanar, non-U-shaped structures. For example, the gate electrode mayconsist of one or more U-shaped metal layers formed atop one or moreplanar, non-U-shaped layers.

Spacers associated with the gate electrode stacks may be composed of amaterial suitable to ultimately electrically isolate, or contribute tothe isolation of, a permanent gate structure from adjacent conductivecontacts, such as self-aligned contacts. For example, in one embodiment,the spacers are composed of a dielectric material such as, but notlimited to, silicon dioxide, silicon oxy-nitride, silicon nitride, orcarbon-doped silicon nitride.

Gate contact 814 and overlying gate contact via 816 may be composed of aconductive material. In an embodiment, one or more of the contacts orvias are composed of a metal species. The metal species may be a puremetal, such as tungsten, nickel, or cobalt, or may be an alloy such as ametal-metal alloy or a metal-semiconductor alloy (e.g., such as asilicide material).

In an embodiment (although not shown), a contact pattern which isessentially perfectly aligned to an existing gate pattern 808 is formedwhile eliminating the use of a lithographic step with exceedingly tightregistration budget. In an embodiment, the contact pattern is avertically symmetric contact pattern, or an asymmetric contact patternsuch as described in association with FIG. 7J. In other embodiments, allcontacts are front-side connected and are not asymmetric. In one suchembodiment, the self-aligned approach enables the use of intrinsicallyhighly selective wet etching (e.g., versus conventionally implementeddry or plasma etching) to generate contact openings. In an embodiment, acontact pattern is formed by utilizing an existing gate pattern incombination with a contact plug lithography operation. In one suchembodiment, the approach enables elimination of the need for anotherwise critical lithography operation to generate a contact pattern,as used in conventional approaches. In an embodiment, a trench contactgrid is not separately patterned, but is rather formed between poly(gate) lines. For example, in one such embodiment, a trench contact gridis formed subsequent to gate grating patterning but prior to gategrating cuts.

In an embodiment, providing structure 800 involves fabrication of thegate stack structure 808 by a replacement gate process. In such ascheme, dummy gate material such as polysilicon or silicon nitridepillar material, may be removed and replaced with permanent gateelectrode material. In one such embodiment, a permanent gate dielectriclayer is also formed in this process, as opposed to being carriedthrough from earlier processing. In an embodiment, dummy gates areremoved by a dry etch or wet etch process. In one embodiment, dummygates are composed of polycrystalline silicon or amorphous silicon andare removed with a dry etch process including use of SF₆. In anotherembodiment, dummy gates are composed of polycrystalline silicon oramorphous silicon and are removed with a wet etch process including useof aqueous NH₄OH or tetramethylammonium hydroxide. In one embodiment,dummy gates are composed of silicon nitride and are removed with a wetetch including aqueous phosphoric acid.

Referring again to FIG. 8 , the arrangement of semiconductor structureor device 800 places the gate contact over isolation regions. Such anarrangement may be viewed as inefficient use of layout space. In anotherembodiment, however, a semiconductor device has contact structures thatcontact portions of a gate electrode formed over an active region, e.g.,over a fin 805, and in a same layer as a trench contact via.

In an embodiment, the structure of FIG. 8 can be fabricated to include aconductive structure in a fin isolation region, examples of which aredescribed above.

It is to be appreciated that not all aspects of the processes describedabove need be practiced to fall within the spirit and scope ofembodiments of the present disclosure. Also, the processes describedherein may be used to fabricate one or a plurality of semiconductordevices. The semiconductor devices may be transistors or like devices.For example, in an embodiment, the semiconductor devices are ametal-oxide semiconductor (MOS) transistors for logic or memory, or arebipolar transistors. Also, in an embodiment, the semiconductor deviceshave a three-dimensional architecture, such as a nanowire device, ananoribbon device, a tri-gate device, an independently accessed doublegate device, or a FIN-FET. One or more embodiments may be particularlyuseful for fabricating semiconductor devices at a sub-10 nanometer (10nm) technology node.

In an embodiment, as used throughout the present description, interlayerdielectric (ILD) material is composed of or includes a layer of adielectric or insulating material. Examples of suitable dielectricmaterials include, but are not limited to, oxides of silicon (e.g.,silicon dioxide (SiO₂)), doped oxides of silicon, fluorinated oxides ofsilicon, carbon doped oxides of silicon, various low-k dielectricmaterials known in the arts, and combinations thereof. The interlayerdielectric material may be formed by conventional techniques, such as,for example, chemical vapor deposition (CVD), physical vapor deposition(PVD), or by other deposition methods.

In an embodiment, as is also used throughout the present description,metal lines or interconnect line material (and via material) is composedof one or more metal or other conductive structures. A common example isthe use of copper lines and structures that may or may not includebarrier layers between the copper and surrounding ILD material. As usedherein, the term metal includes alloys, stacks, and other combinationsof multiple metals. For example, the metal interconnect lines mayinclude barrier layers (e.g., layers including one or more of Ta, TaN,Ti or TiN), stacks of different metals or alloys, etc. Thus, theinterconnect lines may be a single material layer, or may be formed fromseveral layers, including conductive liner layers and fill layers. Anysuitable deposition process, such as electroplating, chemical vapordeposition or physical vapor deposition, may be used to forminterconnect lines. In an embodiment, the interconnect lines arecomposed of a conductive material such as, but not limited to, Cu, Al,Ti, Zr, Hf, V, Ru, Co, Ni, Pd, Pt, W, Ag, Au or alloys thereof. Theinterconnect lines are also sometimes referred to in the art as traces,wires, lines, metal, or simply interconnect.

In an embodiment, as is also used throughout the present description,hardmask materials, capping layers, or plugs are composed of dielectricmaterials different from the interlayer dielectric material. In oneembodiment, different hardmask, capping or plug materials may be used indifferent regions so as to provide different growth or etch selectivityto each other and to the underlying dielectric and metal layers. In someembodiments, a hardmask layer, capping or plug layer includes a layer ofa nitride of silicon (e.g., silicon nitride) or a layer of an oxide ofsilicon, or both, or a combination thereof. Other suitable materials mayinclude carbon-based materials. Other hardmask, capping or plug layersknown in the arts may be used depending upon the particularimplementation. The hardmask, capping or plug layers maybe formed byCVD, PVD, or by other deposition methods.

In an embodiment, as is also used throughout the present description,lithographic operations are performed using 193 nm immersion lithography(i193), EUV and/or EBDW lithography, or the like. A positive tone or anegative tone resist may be used. In one embodiment, a lithographic maskis a trilayer mask composed of a topographic masking portion, ananti-reflective coating (ARC) layer, and a photoresist layer. In aparticular such embodiment, the topographic masking portion is a carbonhardmask (CHM) layer and the anti-reflective coating layer is a siliconARC layer.

In another aspect, one or more embodiments are directed to neighboringsemiconductor structures or devices separated by self-aligned gateendcap (SAGE) structures. Particular embodiments may be directed tointegration of multiple width (multi-Wsi) nanowires and nanoribbons in aSAGE architecture and separated by a SAGE wall. In an embodiment,nanowires/nanoribbons are integrated with multiple Wsi in a SAGEarchitecture portion of a front-end process flow. Such a process flowmay involve integration of nanowires and nanoribbons of different Wsi toprovide robust functionality of next generation transistors with lowpower and high performance. Associated epitaxial source or drain regionsmay be embedded (e.g., portions of nanowires removed and then source ordrain (S/D) growth is performed).

To provide further context, advantages of a self-aligned gate endcap(SAGE) architecture may include the enabling of higher layout densityand, in particular, scaling of diffusion-to-diffusion spacing. Toprovide illustrative comparison, FIG. 9 illustrates cross-sectionalviews taken through nanowires and fins for a non-endcap architecture(left-hand side (a)) versus a self-aligned gate endcap (SAGE)architecture (right-hand side (b)), in accordance with an embodiment ofthe present disclosure.

Referring to the left-hand side (a) of FIG. 9 , an integrated circuitstructure 900 includes a substrate 902 having fins 904 protruding therefrom by an amount 906 above an isolation structure 908 laterallysurrounding lower portions of the fins 904. Upper portions of the finsmay include a relaxed buffer layer 922 and a defect modification layer920, as is depicted. Corresponding nanowires 905 are over the fins 904.A gate structure may be formed over the integrated circuit structure 900to fabricate a device. However, breaks in such a gate structure may beaccommodated for by increasing the spacing between fin 904/nanowire 905pairs.

By contrast, referring to the right-hand side (b) of FIG. 9 , anintegrated circuit structure 950 includes a substrate 952 having fins954 protruding therefrom by an amount 956 above an isolation structure958 laterally surrounding lower portions of the fins 954. Upper portionsof the fins may include a relaxed buffer layer 972 and a defectmodification layer 970, as is depicted. Corresponding nanowires 955 areover the fins 954. Isolating SAGE walls 960 (which may include ahardmask thereon, as depicted) are included within the isolationstructure 952 and between adjacent fin 954/nanowire 955 pairs. Thedistance between an isolating SAGE wall 960 and a nearest fin954/nanowire 955 pair defines the gate endcap spacing 962. A gatestructure may be formed over the integrated circuit structure 900,between insolating SAGE walls to fabricate a device. Breaks in such agate structure are imposed by the isolating SAGE walls. Since theisolating SAGE walls 960 are self-aligned, restrictions fromconventional approaches can be minimized to enable more aggressivediffusion-to-diffusion spacing. Furthermore, since gate structuresinclude breaks at all locations, individual gate structure portions maybe layer connected by local interconnects formed over the isolating SAGEwalls 960. In an embodiment, as depicted, the SAGE walls 960 eachinclude a lower dielectric portion and a dielectric cap on the lowerdielectric portion. In accordance with an embodiment of the presentdisclosure, a fabrication process for structures associated with FIG. 9involves use of a process scheme that provides a gate-all-aroundintegrated circuit structure having epitaxial source or drainstructures.

In an embodiment, the structure of part (a) of FIG. 9 can be fabricatedto include a conductive structure in a fin isolation region, examples ofwhich are described above. In an embodiment, the structure of part (b)of FIG. 9 can be fabricated to include a conductive structure in a finisolation region, examples of which are described above.

A self-aligned gate endcap (SAGE) processing scheme involves theformation of gate/trench contact endcaps self-aligned to fins withoutrequiring an extra length to account for mask mis-registration. Thus,embodiments may be implemented to enable shrinking of transistor layoutarea. Embodiments described herein may involve the fabrication of gateendcap isolation structures, which may also be referred to as gatewalls, isolation gate walls or self-aligned gate endcap (SAGE) walls.

In an exemplary processing scheme for structures having SAGE wallsseparating neighboring devices, FIG. 10 illustrate cross-sectional viewsrepresenting various operations in a method of fabricating aself-aligned gate endcap (SAGE) structure with gate-all-around devices,in accordance with an embodiment of the present disclosure.

Referring to part (a) of FIG. 10 , a starting structure includes ananowire patterning stack 1004 above a substrate 1002. A lithographicpatterning stack 1006 is formed above the nanowire patterning stack1004. The nanowire patterning stack 1004 includes alternatingsacrificial layers 1010 and nanowire layers 1012, which may be above arelaxed buffer layer 1082 and a defect modification layer 1080, as isdepicted. A protective mask 1014 is between the nanowire patterningstack 1004 and the lithographic patterning stack 1006. In oneembodiment, the lithographic patterning stack 1006 is trilayer maskcomposed of a topographic masking portion 1020, an anti-reflectivecoating (ARC) layer 1022, and a photoresist layer 1024. In a particularsuch embodiment, the topographic masking portion 1020 is a carbonhardmask (CHM) layer and the anti-reflective coating layer 1022 is asilicon ARC layer.

Referring to part (b) of FIG. 10 , the stack of part (a) islithographically patterned and then etched to provide an etchedstructure including a patterned substrate 1002 and trenches 1030.

Referring to part (c) of FIG. 10 , the structure of part (b) has anisolation layer 1040 and a SAGE material 1042 formed in trenches 1030.The structure is then planarized to leave patterned topographic maskinglayer 1020′ as an exposed upper layer.

Referring to part (d) of FIG. 10 , the isolation layer 1040 is recessedbelow an upper surface of the patterned substrate 1002, e.g., to definea protruding fin portion and to provide a trench isolation structure1041 beneath SAGE walls 1042.

Referring to part (e) of FIG. 10 , the sacrificial layers 1010 areremoved at least in the channel region to release nanowires 1012A and1012B. Subsequent to the formation of the structure of part (e) of FIG.10 , a gate stacks may be formed around nanowires 1012B or 1012A, overprotruding fins of substrate 1002, and between SAGE walls 1042. In oneembodiment, prior to formation of the gate stacks, the remaining portionof protective mask 1014 is removed. In another embodiment, the remainingportion of protective mask 1014 is retained as an insulating fin hat asan artifact of the processing scheme.

Referring again to part (e) of FIG. 10 , it is to be appreciated that achannel view is depicted, with source or drain regions being locatinginto and out of the page. In an embodiment, the channel region includingnanowires 1012B has a width less than the channel region includingnanowires 1012A. Thus, in an embodiment, an integrated circuit structureincludes multiple width (multi-Wsi) nanowires. Although structures of1012B and 1012A may be differentiated as nanowires and nanoribbons,respectively, both such structures are typically referred to herein asnanowires. It is also to be appreciated that reference to or depictionof a fin/nanowire pair throughout may refer to a structure including afin and one or more overlying nanowires (e.g., two overlying nanowiresare shown in FIG. 10 ). In accordance with an embodiment of the presentdisclosure, a fabrication process for structures associated with FIG. 10involves use of a process scheme that provides a gate-all-aroundintegrated circuit structure having epitaxial source or drainstructures.

In an embodiment, the structure of part (e) FIG. 10 can be fabricated toinclude a conductive structure in a fin isolation region, examples ofwhich are described above.

In an embodiment, as described throughout, self-aligned gate endcap(SAGE) isolation structures may be composed of a material or materialssuitable to ultimately electrically isolate, or contribute to theisolation of, portions of permanent gate structures from one another.Exemplary materials or material combinations include a single materialstructure such as silicon dioxide, silicon oxy-nitride, silicon nitride,or carbon-doped silicon nitride. Other exemplary materials or materialcombinations include a multi-layer stack having lower portion silicondioxide, silicon oxy-nitride, silicon nitride, or carbon-doped siliconnitride and an upper portion higher dielectric constant material such ashafnium oxide.

To highlight an exemplary integrated circuit structure having threevertically arranged nanowires, FIG. 11A illustrates a three-dimensionalcross-sectional view of a nanowire-based integrated circuit structure,in accordance with an embodiment of the present disclosure. FIG. 11Billustrates a cross-sectional source or drain view of the nanowire-basedintegrated circuit structure of FIG. 11A, as taken along the a-a′ axis.FIG. 11C illustrates a cross-sectional channel view of thenanowire-based integrated circuit structure of FIG. 11A, as taken alongthe b-b′ axis.

Referring to FIG. 11A, an integrated circuit structure 1100 includes oneor more vertically stacked nanowires (1104 set) above a substrate 1102.In an embodiment, as depicted, a relaxed buffer layer 1102C, a defectmodification layer 1102B, and a lower substrate portion 1102A areincluded in substrate 1102, as is depicted. An optional fin below thebottommost nanowire and formed from the substrate 1102 is not depictedfor the sake of emphasizing the nanowire portion for illustrativepurposes. Embodiments herein are targeted at both single wire devicesand multiple wire devices. As an example, a three nanowire-based deviceshaving nanowires 1104A, 1104B and 1104C is shown for illustrativepurposes. For convenience of description, nanowire 1104A is used as anexample where description is focused on one of the nanowires. It is tobe appreciated that where attributes of one nanowire are described,embodiments based on a plurality of nanowires may have the same oressentially the same attributes for each of the nanowires.

Each of the nanowires 1104 includes a channel region 1106 in thenanowire. The channel region 1106 has a length (L). Referring to FIG.11C, the channel region also has a perimeter (Pc) orthogonal to thelength (L). Referring to both FIGS. 11A and 11C, a gate electrode stack1108 surrounds the entire perimeter (Pc) of each of the channel regions1106. The gate electrode stack 1108 includes a gate electrode along witha gate dielectric layer between the channel region 1106 and the gateelectrode (not shown). In an embodiment, the channel region is discretein that it is completely surrounded by the gate electrode stack 1108without any intervening material such as underlying substrate materialor overlying channel fabrication materials. Accordingly, in embodimentshaving a plurality of nanowires 1104, the channel regions 1106 of thenanowires are also discrete relative to one another.

Referring to both FIGS. 11A and 11B, integrated circuit structure 1100includes a pair of non-discrete source or drain regions 1110/1112. Thepair of non-discrete source or drain regions 1110/1112 is on either sideof the channel regions 1106 of the plurality of vertically stackednanowires 1104. Furthermore, the pair of non-discrete source or drainregions 1110/1112 is adjoining for the channel regions 1106 of theplurality of vertically stacked nanowires 1104. In one such embodiment,not depicted, the pair of non-discrete source or drain regions 1110/1112is directly vertically adjoining for the channel regions 1106 in thatepitaxial growth is on and between nanowire portions extending beyondthe channel regions 1106, where nanowire ends are shown within thesource or drain structures. In another embodiment, as depicted in FIG.11A, the pair of non-discrete source or drain regions 1110/1112 isindirectly vertically adjoining for the channel regions 1106 in thatthey are formed at the ends of the nanowires and not between thenanowires.

In an embodiment, as depicted, the source or drain regions 1110/1112 arenon-discrete in that there are not individual and discrete source ordrain regions for each channel region 1106 of a nanowire 1104.Accordingly, in embodiments having a plurality of nanowires 1104, thesource or drain regions 1110/1112 of the nanowires are global or unifiedsource or drain regions as opposed to discrete for each nanowire. Thatis, the non-discrete source or drain regions 1110/1112 are global in thesense that a single unified feature is used as a source or drain regionfor a plurality (in this case, 3) of nanowires 1104 and, moreparticularly, for more than one discrete channel region 1106. In oneembodiment, from a cross-sectional perspective orthogonal to the lengthof the discrete channel regions 1106, each of the pair of non-discretesource or drain regions 1110/1112 is approximately rectangular in shapewith a bottom tapered portion and a top vertex portion, as depicted inFIG. 11B. In other embodiments, however, the source or drain regions1110/1112 of the nanowires are relatively larger yet discretenon-vertically merged epitaxial structures such as nubs described inassociation with FIGS. 7A-7J.

In accordance with an embodiment of the present disclosure, and asdepicted in FIGS. 11A and 11B, integrated circuit structure 1100 furtherincludes a pair of contacts 1114, each contact 1114 on one of the pairof non-discrete source or drain regions 1110/1112. In one suchembodiment, in a vertical sense, each contact 1114 completely surroundsthe respective non-discrete source or drain region 1110/1112. In anotheraspect, the entire perimeter of the non-discrete source or drain regions1110/1112 may not be accessible for contact with contacts 1114, and thecontact 1114 thus only partially surrounds the non-discrete source ordrain regions 1110/1112, as depicted in FIG. 11B. In a contrastingembodiment, not depicted, the entire perimeter of the non-discretesource or drain regions 1110/1112, as taken along the a-a′ axis, issurrounded by the contacts 1114.

Referring again to FIG. 11A, in an embodiment, integrated circuitstructure 1100 further includes a pair of spacers 1116. As is depicted,outer portions of the pair of spacers 1116 may overlap portions of thenon-discrete source or drain regions 1110/1112, providing for “embedded”portions of the non-discrete source or drain regions 1110/1112 beneaththe pair of spacers 1116. As is also depicted, the embedded portions ofthe non-discrete source or drain regions 1110/1112 may not extendbeneath the entirety of the pair of spacers 1116.

Substrate 1102 may be composed of a material suitable for integratedcircuit structure fabrication. In one embodiment, substrate 1102includes a lower bulk substrate composed of a single crystal of amaterial which may include, but is not limited to, silicon, germanium,silicon-germanium, germanium-tin, silicon-germanium-tin, or a groupIII-V compound semiconductor material. An upper insulator layer composedof a material which may include, but is not limited to, silicon dioxide,silicon nitride or silicon oxy-nitride is on the lower bulk substrate.Thus, the structure 1100 may be fabricated from a startingsemiconductor-on-insulator substrate. Alternatively, the structure 1100is formed directly from a bulk substrate and local oxidation is used toform electrically insulative portions in place of the above describedupper insulator layer. In another alternative embodiment, the structure1100 is formed directly from a bulk substrate and doping is used to formelectrically isolated active regions, such as nanowires, thereon. In onesuch embodiment, the first nanowire (i.e., proximate the substrate) isin the form of an omega-FET type structure.

In an embodiment, the nanowires 1104 may be sized as wires or ribbons,as described below, and may have squared-off or rounder corners. In anembodiment, the nanowires 1104 are composed of a material such as, butnot limited to, silicon, germanium, or a combination thereof. In onesuch embodiment, the nanowires are single-crystalline. For example, fora silicon nanowire 1104, a single-crystalline nanowire may be based froma (100) global orientation, e.g., with a <100> plane in the z-direction.As described below, other orientations may also be considered. In anembodiment, the dimensions of the nanowires 1104, from a cross-sectionalperspective, are on the nano-scale. For example, in a specificembodiment, the smallest dimension of the nanowires 1104 is less thanapproximately 20 nanometers. In an embodiment, the nanowires 1104 arecomposed of a strained material, particularly in the channel regions1106.

Referring to FIGS. 11C, in an embodiment, each of the channel regions1106 has a width (Wc) and a height (Hc), the width (Wc) approximatelythe same as the height (Hc). That is, in both cases, the channel regions1106 are square-like or, if corner-rounded, circle-like in cross-sectionprofile. In another aspect, the width and height of the channel regionneed not be the same, such as the case for nanoribbons as describedthroughout.

In an embodiment, as described throughout, an integrated circuitstructure includes non-planar devices such as, but not limited to, afinFET or a tri-gate device with corresponding one or more overlyingnanowire structures. In such an embodiment, a correspondingsemiconducting channel region is composed of or is formed in athree-dimensional body with one or more discrete nanowire channelportions overlying the three-dimensional body. In one such embodiment,the gate structures surround at least a top surface and a pair ofsidewalls of the three-dimensional body, and further surrounds each ofthe one or more discrete nanowire channel portions.

In an embodiment, the structure of FIGS. 11A-11C can be fabricated toinclude a conductive structure in a fin isolation region, examples ofwhich are described above.

In an embodiment, as described throughout, an underlying substrate maybe composed of a semiconductor material that can withstand amanufacturing process and in which charge can migrate. In an embodiment,the substrate is a bulk substrate composed of a crystalline silicon,silicon/germanium or germanium layer doped with a charge carrier, suchas but not limited to phosphorus, arsenic, boron, gallium or acombination thereof, to form an active region. In one embodiment, theconcentration of silicon atoms in a bulk substrate is greater than 97%.In another embodiment, a bulk substrate is composed of an epitaxiallayer grown atop a distinct crystalline substrate, e.g. a siliconepitaxial layer grown atop a boron-doped bulk silicon mono-crystallinesubstrate. A bulk substrate may alternatively be composed of a groupIII-V material. In an embodiment, a bulk substrate is composed of agroup III-V material such as, but not limited to, gallium nitride,gallium phosphide, gallium arsenide, indium phosphide, indiumantimonide, indium gallium arsenide, aluminum gallium arsenide, indiumgallium phosphide, or a combination thereof. In one embodiment, a bulksubstrate is composed of a group III-V material and the charge-carrierdopant impurity atoms are ones such as, but not limited to, carbon,silicon, germanium, oxygen, sulfur, selenium or tellurium.

Embodiments disclosed herein may be used to manufacture a wide varietyof different types of integrated circuits and/or microelectronicdevices. Examples of such integrated circuits include, but are notlimited to, processors, chipset components, graphics processors, digitalsignal processors, micro-controllers, and the like. In otherembodiments, semiconductor memory may be manufactured. Moreover, theintegrated circuits or other microelectronic devices may be used in awide variety of electronic devices known in the arts. For example, incomputer systems (e.g., desktop, laptop, server), cellular phones,personal electronics, etc. The integrated circuits may be coupled with abus and other components in the systems. For example, a processor may becoupled by one or more buses to a memory, a chipset, etc. Each of theprocessor, the memory, and the chipset, may potentially be manufacturedusing the approaches disclosed herein.

FIG. 12 illustrates a computing device 1200 in accordance with oneimplementation of an embodiment of the present disclosure. The computingdevice 1200 houses a board 1202. The board 1202 may include a number ofcomponents, including but not limited to a processor 1204 and at leastone communication chip 1206. The processor 1204 is physically andelectrically coupled to the board 1202. In some implementations the atleast one communication chip 1206 is also physically and electricallycoupled to the board 1202. In further implementations, the communicationchip 1206 is part of the processor 1204.

Depending on its applications, computing device 1200 may include othercomponents that may or may not be physically and electrically coupled tothe board 1202. These other components include, but are not limited to,volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flashmemory, a graphics processor, a digital signal processor, a cryptoprocessor, a chipset, an antenna, a display, a touchscreen display, atouchscreen controller, a battery, an audio codec, a video codec, apower amplifier, a global positioning system (GPS) device, a compass, anaccelerometer, a gyroscope, a speaker, a camera, and a mass storagedevice (such as hard disk drive, compact disk (CD), digital versatiledisk (DVD), and so forth).

The communication chip 1206 enables wireless communications for thetransfer of data to and from the computing device 1200. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. The communication chip 1206 may implementany of a number of wireless standards or protocols, including but notlimited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE,GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well asany other wireless protocols that are designated as 3G, 4G, 5G, andbeyond. The computing device 1200 may include a plurality ofcommunication chips 1206. For instance, a first communication chip 1206may be dedicated to shorter range wireless communications such as Wi-Fiand Bluetooth and a second communication chip 1206 may be dedicated tolonger range wireless communications such as GPS, EDGE, GPRS, CDMA,WiMAX, LTE, Ev-DO, and others.

The processor 1204 of the computing device 1200 includes an integratedcircuit die packaged within the processor 1204. The integrated circuitdie of the processor 1204 may include one or more structures, such asgate-all-around integrated circuit structures having conductivestructures in fin isolation regions, built in accordance withimplementations of embodiments of the present disclosure. The term“processor” may refer to any device or portion of a device thatprocesses electronic data from registers and/or memory to transform thatelectronic data into other electronic data that may be stored inregisters and/or memory.

The communication chip 1206 also includes an integrated circuit diepackaged within the communication chip 1206. The integrated circuit dieof the communication chip 1206 may include one or more structures, suchas gate-all-around integrated circuit structures having conductivestructures in fin isolation regions, built in accordance withimplementations of embodiments of the present disclosure.

In further implementations, another component housed within thecomputing device 1200 may contain an integrated circuit die thatincludes one or structures, such as gate-all-around integrated circuitstructures having conductive structures in fin isolation regions, builtin accordance with implementations of embodiments of the presentdisclosure.

In various implementations, the computing device 1200 may be a laptop, anetbook, a notebook, an ultrabook, a smartphone, a tablet, a personaldigital assistant (PDA), an ultra mobile PC, a mobile phone, a desktopcomputer, a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder. In further implementations, the computingdevice 1200 may be any other electronic device that processes data.

FIG. 13 illustrates an interposer 1300 that includes one or moreembodiments of the present disclosure. The interposer 1300 is anintervening substrate used to bridge a first substrate 1302 to a secondsubstrate 1304. The first substrate 1302 may be, for instance, anintegrated circuit die. The second substrate 1304 may be, for instance,a memory module, a computer motherboard, or another integrated circuitdie. Generally, the purpose of an interposer 1300 is to spread aconnection to a wider pitch or to reroute a connection to a differentconnection. For example, an interposer 1300 may couple an integratedcircuit die to a ball grid array (BGA) 1306 that can subsequently becoupled to the second substrate 1304. In some embodiments, the first andsecond substrates 1302/1304 are attached to opposing sides of theinterposer 1300. In other embodiments, the first and second substrates1302/1304 are attached to the same side of the interposer 1300. And infurther embodiments, three or more substrates are interconnected by wayof the interposer 1300.

The interposer 1300 may be formed of an epoxy resin, afiberglass-reinforced epoxy resin, a ceramic material, or a polymermaterial such as polyimide. In further implementations, the interposer1300 may be formed of alternate rigid or flexible materials that mayinclude the same materials described above for use in a semiconductorsubstrate, such as silicon, germanium, and other group III-V and groupIV materials.

The interposer 1300 may include metal interconnects 1308 and vias 1310,including but not limited to through-silicon vias (TSVs) 1312. Theinterposer 1300 may further include embedded devices 1314, includingboth passive and active devices. Such devices include, but are notlimited to, capacitors, decoupling capacitors, resistors, inductors,fuses, diodes, transformers, sensors, and electrostatic discharge (ESD)devices. More complex devices such as radio-frequency (RF) devices,power amplifiers, power management devices, antennas, arrays, sensors,and MEMS devices may also be formed on the interposer 1300. Inaccordance with embodiments of the disclosure, apparatuses or processesdisclosed herein may be used in the fabrication of interposer 1300 or inthe fabrication of components included in the interposer 1300.

Thus, embodiments of the present disclosure include integrated circuitstructures having conductive structures in fin isolation regions, andmethods of fabricating integrated circuit structures having conductivestructures in fin isolation regions.

The above description of illustrated implementations of embodiments ofthe disclosure, including what is described in the Abstract, is notintended to be exhaustive or to limit the disclosure to the preciseforms disclosed. While specific implementations of, and examples for,the disclosure are described herein for illustrative purposes, variousequivalent modifications are possible within the scope of thedisclosure, as those skilled in the relevant art will recognize.

These modifications may be made to the disclosure in light of the abovedetailed description. The terms used in the following claims should notbe construed to limit the disclosure to the specific implementationsdisclosed in the specification and the claims. Rather, the scope of thedisclosure is to be determined entirely by the following claims, whichare to be construed in accordance with established doctrines of claiminterpretation.

Example embodiment 1: An integrated circuit structure includes avertical stack of horizontal nanowires over a sub-fin. The integratedcircuit structure also includes a gate structure. The gate structureincludes a first gate structure portion over the vertical stack ofhorizontal nanowires, a second gate structure portion laterally adjacentto the first gate structure portion, wherein the second gate structureportion is not over a channel structure, and a gate cut between thefirst gate structure portion and the second gate structure portion.

Example embodiment 2: The integrated circuit structure of exampleembodiment 1, further including a backside conductive contact coupled tothe second gate structure portion.

Example embodiment 3: The integrated circuit structure of exampleembodiment 2, wherein the backside conductive contact extends laterallybeneath the gate cut.

Example embodiment 4: The integrated circuit structure of exampleembodiment 1, 2 or 3, further including a dielectric gate plug in thegate cut.

Example embodiment 5: The integrated circuit structure of exampleembodiment 4, wherein the dielectric plug is on an isolation structurelaterally between the sub-fin and an extension portion of the secondgate structure portion.

Example embodiment 6: An integrated circuit structure includes a finover a sub-fin. The integrated circuit structure also includes a gatestructure. The gate structure includes a first gate structure portionover the fin, a second gate structure portion laterally adjacent to thefirst gate structure portion, wherein the second gate structure portionis not over a channel structure, and a gate cut between the first gatestructure portion and the second gate structure portion.

Example embodiment 7: The integrated circuit structure of exampleembodiment 6, further including a backside conductive contact coupled tothe second gate structure portion.

Example embodiment 8: The integrated circuit structure of exampleembodiment 7, wherein the backside conductive contact extends laterallybeneath the gate cut.

Example embodiment 9: The integrated circuit structure of exampleembodiment 6, 7 or 8, further including a dielectric gate plug in thegate cut.

Example embodiment 10: The integrated circuit structure of exampleembodiment 9, wherein the dielectric plug is on an isolation structurelaterally between the sub-fin and an extension portion of the secondgate structure portion.

Example embodiment 11: A computing device includes a board, and acomponent coupled to the board. The component includes an integratedcircuit structure including a vertical stack of horizontal nanowiresover a sub-fin. The integrated circuit structure also includes a gatestructure. The gate structure includes a first gate structure portionover the vertical stack of horizontal nanowires, a second gate structureportion laterally adjacent to the first gate structure portion, whereinthe second gate structure portion is not over a channel structure, and agate cut between the first gate structure portion and the second gatestructure portion.

Example embodiment 12: The computing device of example embodiment 11,further including a memory coupled to the board.

Example embodiment 13: The computing device of example embodiment 11 or12, further including a communication chip coupled to the board.

Example embodiment 14: The computing device of example embodiment 11, 12or 13, wherein the component is a packaged integrated circuit die.

Example embodiment 15: The computing device of example embodiment 11,12, 13 or 14, wherein the component is selected from the groupconsisting of a processor, a communications chip, and a digital signalprocessor.

Example embodiment 16: A computing device includes a board, and acomponent coupled to the board. The component includes an integratedcircuit structure including a fin over a sub-fin. The integrated circuitstructure also includes a gate structure. The gate structure includes afirst gate structure portion over the fin, a second gate structureportion laterally adjacent to the first gate structure portion, whereinthe second gate structure portion is not over a channel structure, and agate cut between the first gate structure portion and the second gatestructure portion.

Example embodiment 17: The computing device of example embodiment 16,further including a memory coupled to the board.

Example embodiment 18: The computing device of example embodiment 16 or17, further including a communication chip coupled to the board.

Example embodiment 19: The computing device of example embodiment 16, 17or 18, wherein the component is a packaged integrated circuit die.

Example embodiment 20: The computing device of example embodiment 16,17, 18 or 19, wherein the component is selected from the groupconsisting of a processor, a communications chip, and a digital signalprocessor.

What is claimed is:
 1. An integrated circuit structure, comprising: avertical stack of horizontal nanowires over a sub-fin; and a gatestructure, comprising: a first gate structure portion over the verticalstack of horizontal nanowires; a second gate structure portion laterallyadjacent to the first gate structure portion, wherein the second gatestructure portion is not over a channel structure; and a gate cutbetween the first gate structure portion and the second gate structureportion.
 2. The integrated circuit structure of claim 1, furthercomprising a backside conductive contact coupled to the second gatestructure portion.
 3. The integrated circuit structure of claim 2,wherein the backside conductive contact extends laterally beneath thegate cut.
 4. The integrated circuit structure of claim 1, furthercomprising a dielectric gate plug in the gate cut.
 5. The integratedcircuit structure of claim 4, wherein the dielectric plug is on anisolation structure laterally between the sub-fin and an extensionportion of the second gate structure portion.
 6. An integrated circuitstructure, comprising: a fin over a sub-fin; and a gate structure,comprising: a first gate structure portion over the fin; a second gatestructure portion laterally adjacent to the first gate structureportion, wherein the second gate structure portion is not over a channelstructure; and a gate cut between the first gate structure portion andthe second gate structure portion.
 7. The integrated circuit structureof claim 6, further comprising a backside conductive contact coupled tothe second gate structure portion.
 8. The integrated circuit structureof claim 7, wherein the backside conductive contact extends laterallybeneath the gate cut.
 9. The integrated circuit structure of claim 6,further comprising a dielectric gate plug in the gate cut.
 10. Theintegrated circuit structure of claim 9, wherein the dielectric plug ison an isolation structure laterally between the sub-fin and an extensionportion of the second gate structure portion.
 11. A computing device,comprising: a board; and a component coupled to the board, the componentincluding an integrated circuit structure, comprising: a vertical stackof horizontal nanowires over a sub-fin; and a gate structure,comprising: a first gate structure portion over the vertical stack ofhorizontal nanowires; a second gate structure portion laterally adjacentto the first gate structure portion, wherein the second gate structureportion is not over a channel structure; and a gate cut between thefirst gate structure portion and the second gate structure portion. 12.The computing device of claim 11, further comprising: a memory coupledto the board.
 13. The computing device of claim 11, further comprising:a communication chip coupled to the board.
 14. The computing device ofclaim 11, wherein the component is a packaged integrated circuit die.15. The computing device of claim 11, wherein the component is selectedfrom the group consisting of a processor, a communications chip, and adigital signal processor.
 16. A computing device, comprising: a board;and a component coupled to the board, the component including anintegrated circuit structure, comprising: a fin over a sub-fin; and agate structure, comprising: a first gate structure portion over the fin;a second gate structure portion laterally adjacent to the first gatestructure portion, wherein the second gate structure portion is not overa channel structure; and a gate cut between the first gate structureportion and the second gate structure portion.
 17. The computing deviceof claim 16, further comprising: a memory coupled to the board.
 18. Thecomputing device of claim 16, further comprising: a communication chipcoupled to the board.
 19. The computing device of claim 16, wherein thecomponent is a packaged integrated circuit die.
 20. The computing deviceof claim 16, wherein the component is selected from the group consistingof a processor, a communications chip, and a digital signal processor.